PENUMBUHAN LAPISAN TIPIS ALLOY TERNARY GaAs1-xSbx DARI SUMBER METALORGANIK TMGa, TDMAAs, DAN TDMASb PADA REAKTOR MOCVD

Andi Suhandi, P. Arifin

Abstract


Abstract: Metalorganic chemical vapor deposition (MOCVD) is a growth method of solid material (in the form of thin films, especially for semiconductor materials) from the vapor phase sources of organic metal. Studies on the mechanism of thin solid material-xSbx GaAs1 ternary alloys from sources metalorganik trimethylgallium (TMGa), trisdimethylaminoarsenic (TDMAAs), and trisdimethylaminoantimony (TDMASb) on MOCVD reactor has been conducted to understand the processes of physics and chemistry involved. Knowledge of the processes that occur during the formation of alloys is very important to determine the pair of growth conditions and the proper parameters to produce the alloy-xSbx GaAs1 good quality. The mechanisms studied included decomposition metalorganik sources and chemical reactions that may occur, the incorporation of alloy-forming elements and elements in layers ditum contaminant-healed. This paper presents the results of the review of opportunities and mechanisms for the formation of alloy-xSbx GaAs1 in MOCVD reactor that has been done.